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机译:LT-GaAs中的超快载体动态掺杂有Si Delta层
Moscow Technol Univ Dept Nanotechnol 78 Vernadsky Ave Moscow 119454 Russia;
Moscow Technol Univ Dept Nanotechnol 78 Vernadsky Ave Moscow 119454 Russia;
Moscow Technol Univ Dept Nanotechnol 78 Vernadsky Ave Moscow 119454 Russia;
Moscow Technol Univ Dept Nanotechnol 78 Vernadsky Ave Moscow 119454 Russia;
Russian Acad Sci Inst Ultra High Frequency Semicond Elect 7-5 Nagornyi Dr Moscow 117105 Russia;
Russian Acad Sci Inst Ultra High Frequency Semicond Elect 7-5 Nagornyi Dr Moscow 117105 Russia;
Russian Acad Sci Inst Ultra High Frequency Semicond Elect 7-5 Nagornyi Dr Moscow 117105 Russia;
Russian Acad Sci Inst Ultra High Frequency Semicond Elect 7-5 Nagornyi Dr Moscow 117105 Russia;
LT-GaAs; delta-doping; optical pump-probe; relaxation time;
机译:LT-GaAs中的超快载体动态掺杂有Si Delta层
机译:单晶In2Se3薄层中的超快载流子动力学
机译:单晶ln_2Se_3薄层中的超快载流子动力学
机译:Æ-si掺杂的LT-GaAs中超快载流子动力学
机译:高载流子密度状态下砷化铟镓量子点的超快载流子动力学。
机译:超快yb掺杂光纤激光器使用少数PD
机译:掺杂碳点的高效光敏功能和超快载体动态
机译:用sb掺杂的LT-Gaas增强的二维沉淀过量。