Ultrafast carrier dynamics in LT-GaAs, doped by Æ-si

摘要

/(V * s)). Due to all carrier properties of LT-GaAs, we chose 2 samples of LT-GaAs with δ-Si at substrates with different crystal orientations ([100] and [111]). These samples were chosen to see the influence of crystal orientation on carrier dynamics. As a method for investigation of ultrafast carrier dynamics, we chose “pump-probe” transient reflectivity methodic at room temperature. To understand ultrafast processes in LT-GaAs with δ-Si doping, we use model for transient reflectivity Ortiz [1]. In the model, four parameters were used: N