Phase change memory (PCM) is a promising nonvolatile data storage technology. Ge2Sb2Te5 (GST) and Sb_2Te_3 (ST) are suitable candidates for PCM devices because of a dramatic change in electric resistivities associated with transformation between amorphous and crystalline phases, which forms the basis for data storage. The phase transformation is controlled by Joule-heating and cooling processes and, thus, accurate data for thermal conductivity of the materials are indispensable to optimal designing for PCM devices. However, no accurate data have been reported yet. Thus, the present work aims to determine thermal conductivity of Sb_2Te_3 melt by a newly developed short hot-wire method, as a first step. This method requires only a smaller amount of sample, which leads to reduction of convectional effect due to more uniform temperature distribution in the sample.
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