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An improved interatomic potential for xenon in UO_2: a combined density functional theory/genetic algorithm approach

机译:改进的UO_2氙原子间原子势:密度泛函理论/遗传算法相结合

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摘要

We have created an improved xenon interatomic potential for use with existing UO_2 potentials. This potential was fit to density functional theory calculations with the Hubbard U correction (DFTCU) using a genetic algorithm approach called iterative potential refinement (IPR). We examine the defect energetics of the IPR-fitted xenon interatomic potential as well as other, previously published xenon potentials. We compare these potentials to DFTCU derived energetics for a series of xenon defects in a variety of incorporation sites (large, intermediate, and small vacant sites). We find the existing xenon potentials overestimate the energy needed to add a xenon atom to a wide set of defect sites representing a range of incorporation sites, including failing to correctly rank the energetics of the small incorporation site defects (xenon in an interstitial and xenon in a uranium site neighboring uranium in an interstitial). These failures are due to problematic descriptions of Xe-O and/or Xe-U interactions of the previous xenon potentials. These failures are corrected by our newly created xenon potential: our IPR-generated potential gives good agreement with DFTCU calculations to which it was not fitted, such as xenon in an interstitial (small incorporation site) and xenon in a double Schottky defect cluster (large incorporation site). Finally, we note that IPR is very flexible and can be applied to a wide variety of potential forms and materials systems, including metals and EAM potentials.
机译:我们创建了一种改进的氙原子间势,可与现有的UO_2势一起使用。使用称为迭代电势细化(IPR)的遗传算法方法,通过Hubbard U校正(DFTCU)将该密度拟合为密度泛函理论计算。我们研究了适合IPR的氙原子间势以及其他先前发布的氙势的缺陷能。我们将这些潜能与DFTCU衍生的能量学技术在各种掺入位点(大,中和小空位)中的一系列氙缺陷进行了比较。我们发现现有的氙气势能高估了将氙原子添加到代表一系列结合位点的大量缺陷位点上所需的能量,包括未能正确地排列小的结合位点缺陷的能量(间隙中的氙和氢原子中的氙)。间隙中与铀相邻的铀站点)。这些失败是由于先前氙气势的Xe-O和/或Xe-U相互作用的问题描述引起的。这些故障已由我们新创建的氙气势纠正:我们的IPR生成的势能与DFTCU计算不符,DFTCU计算结果与之不匹配,例如间隙中的氙(小的掺入位置)和双肖特基缺陷簇中的氙(大)公司网站)。最后,我们注意到IPR非常灵活,可以应用于多种潜在形式和材料系统,包括金属和EAM势。

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