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A phenomenological approach to the anisotropic magnetoresistance and planar all effect in tetragonal La2/3Ca1/3MnO3 thin films

机译:四方La2 / 3Ca1 / 3MnO3薄膜各向异性磁阻和平面全部效应的现象学研究。

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A La2/3Ca1/3MnO3 Hall bar with its long dimension roughly along the hard axis [110] was fabricated on a single-crystal-like tensilely strained film on SrTiO3(001). The anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) have been studied at various external magnetic fields and temperatures. A phenomenological model in the high field limit is developed, and the galvanomagnetic tensor based on a tetragonal symmetry 4/mmm (D4h), applicable to epitaxial films on a substrate, has been obtained by expanding the tensor to the sixth order. The derived in-plane transverse resistance Rxy shows a sin 2φM angular depende nce, while the longitudinal Rxx is constituted by not only a two-fold cos 2φM term, but also a four-fold cos 4φM term due to the square symmetry of the lattice. The model is in good agreement with the experimental results in high fields, while deviations are observed near the100 easy axis with the decreasing field. Close inspection of the fitting parameters reveals the evolution of these term weights with temperature and magnetic field, which is distinct from conventional ferromagnetic metals and cannot be explained by the phenomenological model. An alternative mechanism for AMR, stemming from the magnetization-induced local orbit deformation through spin–orbit interaction, as previously proposed by O’Donnell et al, may be prevalent in manganites and other systems of complicated crystal structure.
机译:在SrTiO3(001)上的单晶状拉伸应变膜上制造了一个La2 / 3Ca1 / 3MnO3霍尔棒,其长径大致沿着硬轴[110]。已经在各种外部磁场和温度下研究了各向异性磁阻(AMR)和平面霍尔效应(PHE)。建立了高场极限的现象学模型,通过将张量扩展到六阶,获得了适用于基板外延膜的基于四方对称4 / mmm(D4h)的电磁张量。导出的平面内横向电阻Rxy显示正弦2φM角相关性,而纵向Rxx不仅由2倍cos2φM项构成,还由4倍cos4φM项构成(由于晶格的方形对称性) 。该模型与高场实验结果吻合良好,而随着电场的减小,在100易轴附近观察到了偏差。仔细检查拟合参数可以发现这些术语权重随温度和磁场的变化,这与常规的铁磁金属不同,不能用现象学模型解释。如O’Donnell等人先前所提出的那样,由自旋轨道相互作用引起的磁化引起的局部轨道变形引起的AMR替代机制可能在锰矿和其他复杂晶体结构系统中很普遍。

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