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首页> 外文期刊>Journal of Physics. Condensed Matter >On the blueshift in Sn1-xCoxO2-delta transparent ferromagnetic semiconductor thin films
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On the blueshift in Sn1-xCoxO2-delta transparent ferromagnetic semiconductor thin films

机译:Sn1-xCoxO2-δ透明铁磁半导体薄膜的蓝移

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Optical properties of spray pyrolysed Sn1-xCoxO2-delta (0 <= x <= 0.15) thin films exhibiting room temperature ferromagnetism have been investigated in the energy range 1 - 6 eV. The onset of optical absorption is blueshifted by as much as 220 meV for a cobalt concentration of 10a/o (x = 0.10). Our detailed analysis indicates that the most probable cause of the blueshift is the Burstein Moss effect. The optical conductivity calculations reveal that Co does not introduce any mid-gap states. Also the small change in the slope of alpha(2) versus h. indicates that the O and Sn band edges are affected on Co addition. This band-edge shift also implies the presence of strong Coulomb interaction between Co, Sn and O sites, as a plausible cause of the observed ferromagnetism in these samples. The Burstein - Moss effect seems to be masking the effect of band structure modification introduced by Co addition. The high (similar to 75%) optical transparency of these films in the visible region remains practically unaffected on Co addition.
机译:已经研究了在能量范围为1-6 eV的情况下,喷雾热解的具有室温铁磁性的Sn1-xCoxO2-δ(0 <= x <= 0.15)薄膜的光学性能。当钴浓度为10a / o(x = 0.10)时,光吸收的开始会蓝移多达220 meV。我们的详细分析表明,造成蓝移的最可能原因是Burstein Moss效应。光电导率计算表明,Co没有引入任何中间能隙状态。同样,alpha(2)与h的斜率的微小变化。表示O和Sn带的边缘会受到Co添加的影响。这种带边位移还意味着在Co,Sn和O位之间存在强大的库仑相互作用,这是在这些样品中观察到的铁磁性的合理原因。 Burstein-Moss效应似乎掩盖了Co加成引入的能带结构修饰效应。这些膜在可见光区域的高(大约75%)光学透明性实际上不受添加Co的影响。

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