Intrinsic life-time and external manipulation of Neel states in antiferromagnetic adatom spins on semiconductor surfaces

摘要

It has been proposed that antiferromagnetic Fe adatom spins on semiconductor Cu-N surfaces can be used to store information (Loth et al 2012 Science 335 196). Here, we investigate spin dynamics of such antiferromagnetic systems through Monte Carlo simulations. We find out the temperature and size laws of switching rates of Neel states and show that the Neel states can become stable enough for the information storage when the number of spins reaches one or two dozens of the Fe spins. We also explore promising methods for manipulating the Neel states. These could help realize information storage with such antiferromagnetic spin systems.