The evolution of resistance switching behaviour of an Ag/DyMnO _3/Ag/DyMnO_3/Pt memristor structure under repetitive voltage sweeping is investigated. It is observed that the current-voltage (I-V) characteristic evolves from simple bipolar switching behaviour to a complicated switching sequence, which is applicable in passive crossbar arrays. It is suggested that the filament morphology can be modulated by accumulation and release of the Joule heating and Ag ions/atoms residing inside the DyMnO _3 layer during continuous switching. The filament growth/dissolution near the upper surface of the middle Ag layer plays a key role in the consequent I-V characteristics.
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