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Strong resistance of silicene nanoribbons towards oxidation

机译:硅纳米带的强抗氧化性

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Silicene, the new allotropic form of silicon, represents an interesting promise for future new nanostructured materials. Here, we investigate the room temperature oxidation of a one-dimensional grating of silicene nanoribbons grown on a Ag(1 1 0) surface by high-resolution Si 2p core level photoemission spectroscopy and low-energy electron diffraction observations. The oxidation process starts at very high oxygen exposures, about 10~4 times higher than on the clean Si(1 1 1)7 × 7 surface, which demonstrates the low reactivity of silicene to molecular oxygen. Ar~+sputtering produces defects, which enhance the oxidation uptake.
机译:硅,一种新的同素异形形式的硅,代表了未来新型纳米结构材料的有趣前景。在这里,我们通过高分辨率的Si 2p核心能级光发射光谱法和低能电子衍射观测研究了在Ag(1 1 0)表面上生长的一维硅纳米带光栅的室温氧化。氧化过程始于非常高的氧气暴露量,比干净的Si(1 1 1)7×7表面高出10到4倍,这表明硅对分子氧的反应性低。 Ar〜+溅射会产生缺陷,从而增加氧化吸收。

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