首页> 外文期刊>Journal of Molecular Structure >Structural, electronic and charge transfer studies of dianthra[2,3-b:2', 3'-f]thieno[3,2-b]thiophene and its analogues: Quantum chemical investigations
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Structural, electronic and charge transfer studies of dianthra[2,3-b:2', 3'-f]thieno[3,2-b]thiophene and its analogues: Quantum chemical investigations

机译:双硫[2,3-b:2',3'-f]噻吩并[3,2-b]噻吩及其类似物的结构,电子和电荷转移研究:量子化学研究

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The ground state structures of dianthra[2,3-b:2',3'-f]thieno[3,2-b] thiophene, its derivatives and analogues have been optimized at B3LYP/6-31G** level of density functional theory. The computed geometrical parameters are in good agreement with the experimental data. The decrease in the bond length has been observed in the sequence, SAC > BAC >OAC. The substitution of-F and-N has no effect to lengthen or shorten the nearest CAC or central CAC, SAC, OAC, BAC bond lengths. The highest occupied molecular orbitals (HOMOs) and lowest unoccupied molecular orbitals (LUMOs) of all the molecules are spread over the whole pi-conjugated backbones with similar character. The HOMOs displays bonding character within each unit while the LUMOs exhibit the antibonding character. By substituting the boron (3), fluoro and nitrogen (4-6) make the LUMOs energy levels lower resulting higher electron mobility. The values of IPv/a and EAv/a increase from 1 to 6 except in 2 where EA decrease but the effect is not so significant. The high EAs of 3 and 6 revealed that these molecules would be more suitable for generating free electron. The positive correlation between EAv and the LUMO levels has been observed. The 3 and 6 would be better as n-type materials having EAs close to 3.0 eV. The electron reorganization energies for 1, 2, 4 and 5 are higher than hole reorganization energies while λ_e are less than those of λ_h for 3 and 6. In the last step, we have simulated and successfully regenerated the crystal structure of parent molecule by MM energy minimization approach.
机译:双硫[2,3-b:2',3'-f]噻吩并[3,2-b]噻吩的基态结构,其衍生物和类似物已在密度泛函的B3LYP / 6-31G **水平进行了优化理论。计算得到的几何参数与实验数据吻合良好。在序列SAC> BAC> OAC中观察到键长的减小。 -F和-N的取代不会延长或缩短最接近的CAC或中心CAC,SAC,OAC,BAC键的长度。所有分子中最高的占据分子轨道(HOMO)和最低的未占据分子轨道(LUMO)分布在具有相似特征的整个π共轭骨架上。 HOMO显示每个单元内的粘合特性,而LUMO显示反粘合特性。通过取代硼(3),氟和氮(4-6),LUMO的能级降低,从而导致更高的电子迁移率。 IPv / a和EAv / a的值从1增加到6,但在2中EA减小了,但效果不是很明显。 3和6的高EA显示这些分子将更适合产生自由电子。已经观察到EAv和LUMO水平之间的正相关。 3和6作为EA接近3.0 eV的n型材料会更好。 1、2、4和5的电子重组能高于空穴重组能,而3_和6的λ_e小于λ_h。在最后一步,我们通过MM模拟并成功地再生了母体分子的晶体结构能量最小化方法。

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