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A novel structured plastic substrate for light confinement in thin film silicon solar cells by a geometric optical effect

机译:一种通过几何光学效应将光限制在薄膜硅太阳能电池中的新型结构化塑料基板

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摘要

We present a novel method to achieve light trapping in thin film silicon solar cells. Unlike the commonly used surface textures, such as Asahi U-type TCO, that rely on light scattering phenomena, we employ embossed periodically arranged micro-pyramidal structures with feature sizes much larger than the wavelength of visible light. Angular resolved transmission of light through these substrates indeed showed diffraction patterns, unlike in the case of Asahi U-type substrates, which show angular resolved scattering. Single junction amorphous silicon (a-Si) solar cells made at 125 °C on the embossed structured polycarbonate (PC) substrates showed an increase in current density by 24% compared to a similar solar cell on a flat substrate. The band gap and thickness of the i-layer made by VHF PECVD are 1.9 eV and 270 nm respectively. A double p-layer (nc-Si:H/a-Si:H) was used to make proper contact with ZnO:Al TCO. Numerical modeling, called DokterDEP was performed to fit the dark and light current-voltage parameters and understand the characteristics of the cell. The output parameters from the modeling suggest that the cells have excellent built-in potential (V _(bi)). However, a rather high recombination voltage, V _μ, affects the FF and short circuit current density (J _(sc)) for the cells on Asahi as well as for the cells on PC. A rather high parallel resistance ? 1 Mσcm ~2 (obtained from the modeling) infers that there is no significant shunt leakage, which is often observed for solar cells made at low temperatures on rough substrates. An efficiency of more than 6% for a cell on PC shows enormous potential of this type of light trapping structures.
机译:我们提出一种新颖的方法来实现薄膜硅太阳能电池中的光捕获。与依赖于光散射现象的常用表面纹理(例如旭U型TCO)不同,我们采用凹凸压花的周期性排列的微型金字塔结构,其特征尺寸远大于可见光的波长。通过这些基板的角分辨光传输确实显示了衍射图样,与旭化成U型基板的情况不同,后者显示了角分辨散射。与在平坦基板上的类似太阳能电池相比,在压纹结构化聚碳酸酯(PC)基板上在125°C的温度下制造的单结非晶硅(a-Si)太阳能电池的电流密度增加了24%。通过VHF PECVD制得的i层的带隙和厚度分别为1.9 eV和270 nm。使用双层p层(nc-Si:H / a-Si:H)与ZnO:Al TCO进行适当的接触。进行了名为DokterDEP的数值建模,以适应暗电流和亮电流电压参数并了解电池的特性。建模的输出参数表明电池具有出色的内置电势(V _(bi))。但是,相当高的重组电压V_μ会影响Asahi上的电池以及PC上的电池的FF和短路电流密度(J _(sc))。较高的并联电阻? 1Mσcm〜2(从模型中获得)表明没有明显的分流泄漏,这通常是在低温下在粗糙基板上制成的太阳能电池中观察到的。 PC上一个单元的效率超过6%,表明这种类型的光捕获结构具有巨大的潜力。

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