An interface dipole predictive model for high-A: dielectric/semiconductor heterostructures using the concept of the dipole neutrality point

摘要

This study introduces a predictive model involving the concept of the dipole neutrality point (DNP) for dipoles at the high-k dielectric/semiconductor interface. The DNP allows a simple and intuitive prediction of interface dipoles using electronegativity (EN). This concept is formulated based on a negative correlation between the dielectric work function and EN observed for many high-k: oxides using both our measured electron affinity values and those available from the literature. Good agreement in the interface dipoles prediction is observed for our measured dipoles and the flatband voltage shifts from other reports. The simple model will be beneficial for investigations involving threshold voltage adjustment in metal-oxide-semiconductor devices using high-k; dielectric materials, which is important for advanced gate stacks development.