Multiple Negative Differential Resistance Device by Using the Ambipolar Behavior of Tunneling Field Effect Transistor with Fast Switching Characteristics

摘要

We propose a novel double-peak negative differential resistance (NDR) characteristic at the conventional single-peak MOS-NDR circuit by employing ambipolar behavior of TFET. The fluctuated voltage transfer curve (VTC) from ambipolar inverter is analyzed with simple model and successfully demonstrated with TFET, as a practical example, on the device simulation. We also verified that the fluctuated VTC generates additional peak and valleys on NDR characteristics by using circuit simulations. Moreover, by adjusting the threshold voltage of conventional MOSFET, ultra-high 1st and 2nd peak-to-valley current ratio (PVCR) over 10(7) is obtained with fully suppressed valley currents. The proposed double-peak NDR circuit expected to apply on faster switching and low power multi-functional applications.