Effects of Air Annealing on the Properties of ZTO/SiC Heterojunctions

摘要

We investigated the effects of air annealing on the electrical and thermal properties of ZTO/4H-SiC heterojunctions. A ZTO thin-film layer was grown on a p-type 4H-SiC substrate using solution processing. When the ZTO/SiC heterojunction was annealed at 500 degrees C, the ZTO-film carrier concentration was increased from similar to 1.04x10(19) cm(-3) to similar to 6.11x10(20) cm(-3) owing to the reductions in O-H bonds, which were confirmed by FTIR spectroscopy. The electrical characterization of the ZTO/SiC heterojunction was carried out in the temperature range of 300 similar to 500 K. When the temperature is 500 K, the reverse current of the annealed device is decreased similar to 35% compared to that of the as-grown device at -5 V. These results are assumed to be related to activation energy at reverse bias.