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Research on Interface Structure During Nanowelding with Molecular Dynamics and Experimental Method

机译:纳米焊接过程中界面结构的分子动力学研究与实验方法

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The mechanism of nanowelding between single-walled carbon nanotubes (SWNTs) and Ni substrate was investigated by molecular dynamics (MD) and experimental method. The horizontal oriented nanowelding system composed of metal electrode and SWNT subsystem was built for simulation study. The dynamic process of nanowelding was described completely at atomistic length scales, and the evolution of welding interface structure under different temperature and time was revealed by MD method. Simulation results showed nanowelding could be accomplished at a temperature (1500 K) below the melting point of Ni (1726 K). The mechanism responsible for nanowelding was revealed as the result of the high-frequency ultrasonic energy softening the metal and causing plastic deformation of the metal under the clamping stress because of the ` acoustic softening effect.' Based on simulation results, reliable contact between SWNTs and Ni substrate was built under proper nanowelding parameters by experiments. SWNTs were deposited on Ni substrate by electrophoretic deposition. The samples of sedimentary SWNT films were applied to ultrasonic nanowelding. Scanning electron microscopy results proved that SWNTs were embedded into the Ni metal layer and acted as stable filed emitter. The welded cathode exhibited enhanced field emission properties. The turn-on field of welded cathode decreased from 5.2 to 2.1 V/mu m. By using nanowelding technique, high efficiency of preparing SWNT cathode is achieved and the progress in manufacturing large-scale of SWNT cathode is accelerated.
机译:通过分子动力学(MD)和实验方法研究了单壁碳纳米管(SWNTs)与Ni基体之间的纳米焊接机理。建立了由金属电极和SWNT子系统组成的水平取向纳米焊接系统,进行了仿真研究。用原子长度尺度完整地描述了纳米焊接的动力学过程,并通过MD方法揭示了不同温度和时间下焊接界面结构的演变。模拟结果表明,可以在低于Ni熔点(1726 K)的温度(1500 K)下完成纳米焊接。高频焊接能量使金属软化并由于“声软化效应”而在夹持应力下引起金属塑性变形,从而揭示了导致纳米焊接的机理。根据仿真结果,通过适当的纳米焊接参数,建立了单壁碳纳米管与镍基体之间的可靠接触。通过电泳沉积将SWNT沉积在Ni衬底上。将沉积的SWNT薄膜样品应用于超声纳米焊接。扫描电子显微镜结果证明,SWNTs嵌入到Ni金属层中,并作为稳定的场发射体。焊接的阴极表现出增强的场发射性能。焊接阴极的导通场从5.2 V /μm降低到2.1 V /μm。通过纳米焊接技术,实现了高效率的SWNT阴极的制备,并加快了大规模SWNT阴极的制造进度。

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