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Metal Patterning Process on Rigid and Flexible Substrates Using Nanoimprint Lithography and Resist Pattern Transfer Technique

机译:使用纳米压印光刻和抗蚀剂图案转移技术在刚性和柔性基板上进行金属图案化工艺

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摘要

Fabrication of high aspect ratio metal patterns without rabbit ear shaped defects on rigid Si and flexible polyethylene terephthalate (PET) substrates was demonstrated. This process is composed of UV nanoimprint lithography (UV-NIL), resist pattern transfer step, and lift-off process. The imprinted resist pattern with a positive pattern profile on a water soluble polyvinyl alcohol (PVA) coated transparent substrate was transferred to Si and PET substrates in order to create an undercut profile for the high fidelity lift-off process using an UV curable adhesive. After the pattern transfer step, the PVA coated substrate was released by water soaking. The adhesive residue on the substrate was removed by short O_2 reactive ion etching (RIE) without significant change of the resist pattern profile. Subsequently, the metal film was deposited by e-beam evaporation on the sample and the resist pattern was removed by acetone solution. As a result, the metal patterns with 250 nm of linewidth and 80 nm of thickness were formed by this process on Si and flexible PET substrates without rabbit ear shaped defects.
机译:演示了在刚性Si和柔性聚对苯二甲酸乙二酯(PET)基板上制造无长耳朵形缺陷的高纵横比金属图案的方法。此过程由UV纳米压印光刻(UV-NIL),抗蚀剂图案转移步骤和剥离过程组成。将具有正图案轮廓的压印抗蚀剂图案转移到Si和PET衬底上,该图案在水溶聚乙烯醇(PVA)涂覆的透明基材上具有正图案轮廓,以便使用UV固化粘合剂为高保真剥离工艺创建底切轮廓。在图案转印步骤之后,通过浸泡释放PVA涂覆的基材。通过短的O_2反应离子刻蚀(RIE)去除了基材上的粘合剂残留物,而抗蚀剂图形轮廓没有明显变化。随后,通过电子束蒸发将金属膜沉积在样品上,并通过丙酮溶液去除抗蚀剂图案。结果,通过该工艺在没有兔耳形缺陷的Si和柔性PET基板上形成线宽为250nm且厚度为80nm的金属图案。

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