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首页> 外文期刊>Journal of Materials Science >Substrate influences on the properties of SnS thin films deposited by chemical spray pyrolysis technique for photovoltaic applications
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Substrate influences on the properties of SnS thin films deposited by chemical spray pyrolysis technique for photovoltaic applications

机译:衬底对化学喷雾热解技术在光伏应用中沉积SnS薄膜性能的影响

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Herein, we report on tin monosulfide (SnS) thin films elaborated by the Chemical Spray Pyrolysis (CSP) technique onto various substrates as simple glass, ITO-, and Mo-coated glasses in order to study the influence of substrates on the physical and chemical properties of Sns thin films. Structural analysis revealed that all films crystallize in orthorhombic structure with (111) as the sole preferential direction without secondary phases. In addition, film prepared onto pure glass exhibits a better crystallization compared to films deposited onto coated glass substrates. Raman spectroscopy analysis confirms the results obtained by X-ray diffraction with modes corresponding well to SnS single-crystal orthorhombic ones (47, 65, 94, 160, 186, and 219 cm 21) without any additional parasite secondary phase like Sn2S3 or SnS2. Field emission scanning electron microscope revealed that all films have a cornflake-like particles surface morphology, and energy dispersive X-ray spectroscopy analysis showed the presence of sulfur and tin with a nearly stoichiometric ratio in films deposited onto pure glass. High surface roughness and large grains are observable in film deposited onto glass. From optical spectroscopy, it is inferred that band gap energy of SnS/glass and SnS/ITO were 1.64 and 1.82 eV, respectively.
机译:在本文中,我们报告了通过化学喷雾热解(CSP)技术将单硫化锡(SnS)薄膜加工到各种基板上的简单玻璃,ITO和Mo涂层玻璃,以便研究基板对物理和化学的影响Sns薄膜的性能结构分析表明,所有薄膜均以(111)为唯一优先方向的正交结构结晶,没有第二相。另外,与沉积在涂覆的玻璃基板上的膜相比,在纯玻璃上制备的膜表现出更好的结晶性。拉曼光谱分析证实了通过X射线衍射获得的结果,其模式与SnS单晶正交晶体(47、65、94、160、186和219 cm 21)的模式非常吻合,而没有任何额外的寄生第二相,如Sn2S3或SnS2。场发射扫描电子显微镜显示,所有薄膜均具有玉米片状颗粒的表面形态,能量色散X射线光谱分析表明,沉积在纯玻璃上的薄膜中存在接近化学计量比的硫和锡。在沉积到玻璃上的薄膜中可观察到高表面粗糙度和大晶粒。从光谱学可知,SnS /玻璃和SnS / ITO的带隙能量分别为1.64和1.82eV。

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