Microstructure and properties of Sip/Al–20 wt% Si composite prepared by hot-pressed sintering technology

摘要

In the present work, 50 vol% Sip/Al–20Si composite was prepared by hot-pressed sintering technology. Si particles were uniformly distributed in the Sip/Al– 20Si composite, and only the presence of Si and Al phases were detected by XRD analysis. Dislocations, twins, and stacking faults were found in the Si particles. Several Si phases were found to be precipitated between Al matrix and Si particles. Si/Al interface was clean, smooth, and free from interfacial product. HRTEM indicated that the Si/Al interface was well bonded. The average CTE and thermal conductivity (TC) of Sip/Al–20Si composite were 11.7×10~(-6)/℃ and 118 W/(m K), respectively. Sip/Al– 20Si composite also demonstrated high mechanical properties (bending strength of 386 MPa). Thus, the comprehensive performance (low density and CTE, high TC, and mechanical properties) makes the Sip/Al–20Si composite very attractive for application in electron packaging.