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Microstrain and growth fault structures in electrodeposited nanocrystalline Ni and Ni-Fe alloys

机译:电沉积纳米晶Ni和Ni-Fe合金的微应变和生长断层结构

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Nanocrystalline Ni and Ni-Fe alloys produced by electrodeposition were characterized using high-resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD). The grain sizes for these materials spanned a range of about 81-10 nm. HR-TEM analysis on a series of images revealed the presence of local strains at both high-angle and low-angle grain boundaries and twin boundaries. In addition to this, stacking faults and twins of the growth type (growth faults) were observed in both the nanocrystalline Ni and Ni-Fe alloys. The growth fault density increased with increasing Fe concentration, which is consistent with a decrease in the stacking fault energy. The microstrain for the samples was determined from XRD pattern analysis based on line broadening. A general increasing microstrain trend with decreasing grain size was observed and considered to be related to the local strains observed at grain boundaries in the HR-TEM image analysis. With respect to grain size, the microstrain values for the nanocrystalline Ni-Fe samples were noticeably higher than some of the Ni samples. Further XRD pattern analysis was performed to determine the growth fault probabilities for each of the samples and analyze their influence on the microstrain. Increasing Fe was accompanied by an increase in growth fault probability, which was consistent with the HR-TEM image analysis. In addition to the effect of grain size, there is likely a contributing effect on microstrain-induced XRD line broadening due to the presence of growth faults.
机译:使用高分辨率透射电子显微镜(HR-TEM)和X射线衍射(XRD)对通过电沉积生产的纳米晶Ni和Ni-Fe合金进行了表征。这些材料的晶粒尺寸跨越约81-10nm的范围。在一系列图像上的HR-TEM分析表明,在高角度和低角度晶界以及双晶界都存在局部应变。除此之外,在纳米晶Ni和Ni-Fe合金中均观察到堆垛层错和生长类型的孪晶(生长缺陷)。随着Fe浓度的增加,生长缺陷密度增加,这与堆垛层错能量的减少是一致的。样品的微应变是根据线宽从XRD图谱分析确定的。观察到随着晶粒尺寸减小总的微应变趋势增加,并且被认为与HR-TEM图像分析中在晶界处观察到的局部应变有关。关于晶粒尺寸,纳米晶Ni-Fe样品的微应变值明显高于一些Ni样品。进行了进一步的XRD图谱分析,以确定每个样品的生长故障概率,并分析它们对微应变的影响。 Fe的增加伴随着生长缺陷概率的增加,这与HR-TEM图像分析相符。除了晶粒尺寸的影响外,由于生长缺陷的存在,可能还会对微应变诱导的XRD线展宽产生贡献。

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