Dense PLZT films grown on nickel substrates by PVP-modified sol-gel method

摘要

We have successfully grown ferroelectric Pb_(0.92)La _(0.08)Zr_(0.52)Ti_(0.48)O_3 (PLZT) films on base metal foils by chemical solution deposition using sol-gel solutions containing polyvinylpyrrolidone. Under zero-bias field, we measured a dielectric constant of ≈820 and dielectric loss of ≈0.06 at room temperature, and a dielectric constant of ≈1250 and dielectric loss of ≈0.03 at 150 °C. In addition, leakage current density of ≈1.5 × 10~(-8) A/cm~2, remanent polarization of ≈11.2 μC/cm~2, and coercive field of ≈40.6 kV/cm were measured at room temperature on a ≈3-μm-thick PLZT film grown on LaNiO_3-buffered nickel substrate. Finally, energy density ≈25 J/cm~3 was measured from the P-E hysteresis loop at an applied field of 2 × 10~6 V/cm.