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首页> 外文期刊>Journal of Materials Science >Role of doping-induced photochemical and microstructural properties in the photocatalytic activity of InVO4 for splitting of water
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Role of doping-induced photochemical and microstructural properties in the photocatalytic activity of InVO4 for splitting of water

机译:掺杂诱导的光化学和微结构性质在InVO4分解水的光催化活性中的作用

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We report in this paper on microstructural, optical and photocatalytic properties of single-phase indium orthovanadates, as a function of doping at lattice sites. The UV-visible spectra of these samples exhibited intense UV-region bands at 250 and 350 nm, besides broad absorption band in visible region (350-700 nm). The wavelength at absorption edge and the intensity of visible absorption showed considerable increase on doping of an impurity, particularly at V or O lattice sites. Also, the samples gave rise to blue-green photoluminescence emission, with overriding bands at ca. 420, 450, 460 and 485 nm, on excitation at 240-420 nm wavelengths. The intensity of these fluorescence bands varied with excitation wavelength and impurity content of a sample. In deviation with several earlier studies, only oxygen and no hydrogen were produced during photocatalytic splitting of water, in the experiments conducted under visible light (>395 nm) and at a pH of ~6.5. The O2 yield depended on the dispersed metal co-catalyst, impurity content and the addition of methanol as sacrificial reagent. On the other hand, small quantities of hydrogen and no oxygen were evolved on UV-irradiation of pure water using metal/InVO4. These results are ascribed to flat band potentials and the doping-induced inter-band donor and acceptor charge trapping states of InVO4, the presence of which is revealed by XRD, luminescence and XPS studies. Our study also confirms that the onset of absorption edge may not necessarily correspond to band-to-band energy gap of a semiconducting material. This accounts for some anomalous band gap energies reported earlier for InVO4.
机译:我们在本文中报道了单相原钒酸铟的微观结构,光学和光催化性能,作为在晶格位点掺杂的函数。这些样品的紫外-可见光谱在250和350 nm处显示出很强的紫外区带,此外在可见区(350-700 nm)还具有宽吸收带。吸收边缘的波长和可见吸收的强度在掺杂杂质时表现出相当大的增加,特别是在V或O晶格位点处。同样,样品引起了蓝绿色的光致发光发射,其上的谱带在约。分别在240-420 nm波长激发下产生420、450、460和485 nm。这些荧光带的强度随激发波长和样品中的杂质含量而变化。与几项早期研究不同的是,在可见光(> 395 nm)和pH值为6.5的实验中,水的光催化分解过程中仅产生氧气,而没有氢气。 O 2的产率取决于分散的金属助催化剂,杂质含量以及作为牺牲试剂的甲醇的添加。另一方面,使用金属/ InVO4对纯水进行紫外线照射后,会释放出少量的氢且没有氧气。这些结果归因于InVO4的平带电势和掺杂诱导的带间施主和受主电荷俘获状态,其存在通过XRD,发光和XPS研究得以揭示。我们的研究还证实,吸收边的开始可能不一定与半导体材料的带间能隙相对应。这解释了先前报道的InVO4的一些异常带隙能。

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