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Influence of excitation frequency on structural and electrical properties of spray pyrolyzed CuInS_2 thin films

机译:激发频率对喷雾热解CuInS_2薄膜结构和电性能的影响

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This paper reports the cost effective deposition of the copper indium sulfide (CuInS_2) thin films under atmospheric conditions via ultrasonic spray pyrolysis. Structural and electrical properties of these films have been tailored by controlling the nozzle excitation frequency and the solution loading. Smoother films have been obtained via 120 kHz excitation frequency compare to the 48 kHz. Band gap energy of the films has also been tailored via excitation frequency. UV-vis-NIR analysis revealed that films deposited at 48 kHz excitation frequency had lower band gap energies. Although, both excitation frequencies resulted chalcopyrite structure, crystallinity of the CuInS_2 films was better for 120kHz. On the other hand, better optical absorption in visible and near infrared region was observed at 48 kHz. Moreover, room temperature electrical conductivity of the samples deposited at 48 kHz excitation frequency was higher than that of samples deposited at 120 kHz. Temperature dependent electrical conductivity data showed that variable range hopping mechanism can be used to explain the conduction of spray pyrolyzed CuInS_2 thin films. Electrical mobility as high as 48cm~2/Vs has been observed for the sample deposited from 0.51 ml/cm~2 loading at 48 kHz excitation frequency. This value is very close to the mobility of vacuum deposited thin films like amorphous silicon, which is one of the most commonly used semiconductor in electronic and energy applications.
机译:本文报道了在大气条件下通过超声喷雾热解法沉积铜铟硫(CuInS_2)薄膜的经济有效方法。这些膜的结构和电学特性已通过控制喷嘴激发频率和溶液加载量进行了定制。与48 kHz相比,通过120 kHz激发频率可以获得更光滑的薄膜。薄膜的带隙能量也已通过激发频率进行了调整。 UV-vis-NIR分析表明,以48 kHz激发频率沉积的薄膜具有较低的带隙能量。尽管这两个激发频率都产生黄铜矿结构,但CuInS_2薄膜的结晶度在120kHz时更好。另一方面,在48 kHz观察到可见光和近红外区的光吸收更好。此外,以48 kHz激发频率沉积的样品的室温电导率高于以120 kHz沉积样品的室温电导率。与温度有关的电导率数据表明,可变范围跳变机制可用于解释喷雾热解CuInS_2薄膜的导电性。对于在48 kHz激发频率下以0.51 ml / cm〜2的载荷沉积的样品,观察到的电迁移率高达48cm〜2 / Vs。该值非常接近真空沉积薄膜(如非晶硅)的迁移率,非晶硅是电子和能源应用中最常用的半导体之一。

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