首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Effect of Yb doping on the crystal structure, polarization dependent optical absorption and photoluminescence of Yb:YVO4 single crystal grown by optical floating zone technique
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Effect of Yb doping on the crystal structure, polarization dependent optical absorption and photoluminescence of Yb:YVO4 single crystal grown by optical floating zone technique

机译:Yb掺杂对通过光学浮区技术生长的Yb:YVO4单晶晶体结构,偏振相关光吸收和光致发光的影响

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Single crystals of Yb doped YVO4 with dopant concentration in the range of 0.75-14.3 at.% were grown by optical floating zone technique. The lattice parameters of YVO4 remain unaffected up to 2.94 at.% doping of Yb but a contraction in the lattice volume was observed at higher concentrations. Spectral decomposition analysis of the broad absorption at 985 nm suggests that in addition to the contributions from three transitions from the ground state of the crystal field induced Stark multiplets of F-2(7/2) and F-2(5/2), it also has contribution from the transition from the first excited Stark level of F-2(7/2) to the upper most Stark level of F-2(5/2). Further, the absorption spectra exhibited significant polarization dependence. It was found that while for sigma- (E perpendicular to c) polarized light the absorption band at similar to 972 dominates for pi- (E parallel to c) dominant absorption is at similar to 985 nm. The absorption cross-section was found to be maximum at 2.94 at.% of doping for both the polarization signifying quenching at higher concentration. The emission spectra of the Yb doped crystals were characterized by two overlapped broad emissions centered at 985 and 1010 nm. The emission at 985 nm dominated over the emission at 1010 nm at lower doping concentrations which reversed at higher doping concentration. It is interesting to note that the PL intensity at 1010 nm is stronger for excitation at 972 nm in comparison to that for 985 nm. (C) 2015 Elsevier B.V. All rights reserved.
机译:通过光学浮区技术生长了掺杂浓度为0.75-14.3at。%的掺Yb的YVO4单晶。 YVO 4的晶格参数在高达2.94 at。%的Yb掺杂下保持不变,但是在较高的浓度下观察到晶格体积的收缩。对985 nm处的宽吸收进行光谱分解分析,结果表明,除了来自晶体场基态的三个跃迁对F-2(7/2)和F-2(5/2)的Stark多重峰的贡献外,从F-2(7/2)的第一个激发斯塔克能级到F-2(5/2)的最高斯塔克能级的跃迁也有贡献。此外,吸收光谱表现出显着的偏振依赖性。已经发现,对于σ-(E垂直于c)偏振光,对于pi-(E平行于c),主吸收在972 nm处近似于972。对于在高浓度下的两个极化表示猝灭,发现吸收截面在掺杂的2.94at。%处最大。掺Yb晶体的发射光谱的特征是两个重叠的宽发射集中在985和1010 nm处。在较低掺杂浓度下,985 nm处的发射比在1010 nm处的发射占优势,在较高掺杂浓度下则相反。有趣的是,与985 nm激发相比,972 nm激发的1010 nm PL强度更高。 (C)2015 Elsevier B.V.保留所有权利。

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