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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Effect of ammonia on morphology, wettability and photoresponse of ZnO nanorods grown by hydrothermal method
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Effect of ammonia on morphology, wettability and photoresponse of ZnO nanorods grown by hydrothermal method

机译:氨对水热法生长ZnO纳米棒的形貌,润湿性和光响应的影响

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摘要

ZnO nanorods were prepared on glass at the temperature of 95 degrees using a hydrothermal method. Microstructure, surface morphology, optical properties, wettability and UV photoreponse of the ZnO nanorods were measured by X-ray diffractometry, scanning electron microscopy, UV-vis spectrophotometer, laser micro-Raman spectrometer, home-made water contact angle apparatus and interactive source meter instrument. The results indicate that the ZnO nanorods appear hexagonal wurtzite structure with a preferred orientation along c-axis. The surface morphology changes from flat hexagonal crystallographic plane to tapered tip, which may be attributed to a dynamic equilibrium between ZnO formation and dissolution. Shift of the absorption edge could be attributed to synergy of the surface morphology and Burstein-Moss effect. The intensity ratio of the visible emission to the UV emission decreases with increasing ammonia additive. Enhanced hydrophobicity and the light-induced reversible wettability of the samples could be attributed to the decrease of surface area fraction of solid and interspaces between ZnO nanorods. The sample with ammonia additive of 2.4 mL has the faster photoresponse, which could be attributed to decrease of the structural point defects. (C) 2015 Elsevier B.V. All rights reserved.
机译:使用水热法在温度为95度的玻璃上制备ZnO纳米棒。用X射线衍射仪,扫描电子显微镜,紫外可见分光光度计,激光显微拉曼光谱仪,自制水接触角仪和交互源仪测量了ZnO纳米棒的微观结构,表面形貌,光学性能,润湿性和紫外光响应。仪器。结果表明,ZnO纳米棒呈六方纤锌矿结构,沿c轴取向较好。表面形态从平坦的六角形晶体平面变为锥形尖端,这可能归因于ZnO形成和溶解之间的动态平衡。吸收边缘的移动可归因于表面形态和Burstein-Moss效应的协同作用。随着氨添加剂的增加,可见光发射与紫外线发射的强度比降低。样品疏水性增强和光诱导的可逆润湿性可归因于固体表面积比和ZnO纳米棒之间空隙的减少。添加了2.4 mL氨水的样品具有更快的光响应,这可以归因于结构点缺陷的减少。 (C)2015 Elsevier B.V.保留所有权利。

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