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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Afterglow performance enhancement and mechanism studies on Y_2O_2S:Eu,Mg,Ti prepared via cold isostatic pressing
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Afterglow performance enhancement and mechanism studies on Y_2O_2S:Eu,Mg,Ti prepared via cold isostatic pressing

机译:冷等静压法制备Y_2O_2S:Eu,Mg,Ti的余辉性能增强及机理研究

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摘要

A Y_2O_2S:Eu,Mg,Ti material was prepared via a modified sulphide-fusion route. Compared with the tradi tional solid-state reaction method, the obtained Y_2O_2S:Eu,Mg,Ti showed smaller, more uniform particles with higher brightness. The afterglow mechanism study indicated that the long-afterglow material is process-dependent and that its performance is determined by recipe, preparation technology and process used. The luminescence centres of Y_20_2S:Ti; Y_2O_2S:Eu,Ti and Y_2O_2S:Eu,Mg,Ti are Ti~(4+) ions, Ti~(4+) + Eu~(3+) ions and Ti~(4+) + Eu~(3+) ions, respectively. The afterglow decay curve cannot be fitted using the exponential equa tion or first-, second-, third-order exponential decay multiple equations beyond 30 min. The afterglow luminescence of the materials resulted from Ti-related defects that make up two new trap levels. Ti dop ing created numerous harmful companying defects that decrease luminescence efficiency. Doping of Mg~(2+) ions facilitated the introduction of Ti~(4+) ions into the Y_2O_2S lattice to effectively modulate the depth and concentration of the trap. Doping of Mg~(2+)Ti~(4+) ion pairs reduced the number of harmful defects through the formation of a compensation-type hetero-valent substitution solid solution that greatly enhance the afterglow performance. Cold isostatic pressing promoted the entry of Ti ions into the Y_2O_2S crystal lattice and eliminated defects, such as preferred orientation. In addition, cold isostatic pressing reduced the E_2 to 0.9 eV, which is beneficial to the long afterglow of the resulting material at room temperature.
机译:通过改进的硫化物融合工艺制备了Y_2O_2S:Eu,Mg,Ti材料。与传统的固态反应方法相比,所获得的Y_2O_2S:Eu,Mg,Ti颗粒更小,更均匀,亮度更高。余辉机理研究表明,长余辉材料取决于工艺,其性能取决于配方,制备工艺和所用工艺。 Y_20_2S:Ti的发光中心; Y_2O_2S:Eu,Ti和Y_2O_2S:Eu,Mg,Ti是Ti〜(4+)离子,Ti〜(4+)+ Eu〜(3+)离子和Ti〜(4+)+ Eu〜(3+)离子。无法使用超过30分钟的指数方程或一阶,二阶,三阶指数衰减多重方程拟合余辉衰减曲线。材料的余辉发光是由与钛有关的缺陷所致,后者构成了两个新的陷阱能级。钛掺杂产生了许多有害的结合缺陷,从而降低了发光效率。 Mg〜(2+)离子的掺杂促进了Ti〜(4+)离子到Y_2O_2S晶格中的引入,从而有效地调节了阱的深度和浓度。 Mg〜(2+)Ti〜(4+)离子对的掺杂通过形成补偿型异价取代固溶体而大大减少了余辉性能,从而减少了有害缺陷的数量。冷等静压促进了Ti离子进入Y_2O_2S晶格,并消除了诸如优选取向之类的缺陷。另外,冷等静压将E_2降低至0.9eV,这有利于所得材料在室温下的长余辉。

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