A giant polarization value in bismuth ferrite thin films

摘要

An approach is used to improve the remanent polarization of BiFeO_3 thin films, where the BiFe_(0.96)Zn_(0.04)O_3 thin film with (111) orientation was grown on the SrRuO_3/SrTiO_3(111) substrate by rf sputtering. A higher dielectric constant and a lower dielectric loss are demonstrated for the BiFe_(0.96)Zn_(0.04)O_3 thin film as compared with those of pure BiFeO_3 thin film. The introduction of Zn deteriorates the magnetic properties of BFO thin films. A giant polarization value of 2P_r ~ 268.5 LiC/cm~2 is induced for the BiFeo.96Zno.04O3 thin film as confirmed by PUND, owing to the (111) orientation, the introduction of Zn, and a low leakage current density.