首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Improvement of porous silicon carbide filters by growth of silicon carbide nanowires using a modified carbothermal reduction process
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Improvement of porous silicon carbide filters by growth of silicon carbide nanowires using a modified carbothermal reduction process

机译:使用改进的碳热还原工艺通过生长碳化硅纳米线来改进多孔碳化硅过滤器

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摘要

Porous ceramics which contain nanowires are promising candidates for catalyst support applications. Here we report a cost-efficient carbothermal reduction process to produce a porous SiC filter with SiC nanowires in the honeycomb structure. For this, the mixture of SiO_2 and carbon black was applied as a source of SiO gas. In addition, the SiC filter was coated with diluted phenolic resin to induce additional carbothermal reduction in the filter. beta-SiC nanowires were successfully obtained at and above 1400 deg C. Surface area of the porous SiC filter increased from 18.72 to 54.51 m~2/g by the in situ formation of the nanowires.
机译:包含纳米线的多孔陶瓷是催化剂载体应用的有前途的候选者。在这里,我们报告了一种具有成本效益的碳热还原工艺,以生产蜂窝结构中具有SiC纳米线的多孔SiC过滤器。为此,将SiO_2和炭黑的混合物用作SiO气体的来源。此外,SiC过滤器还涂有稀释的酚醛树脂,以引起过滤器中碳热的进一步降低。在1400℃以上成功获得了β-SiC纳米线。通过原位形成纳米线,多孔SiC滤膜的表面积从18.72增加到54.51 m〜2 / g。

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