Effect of Ru addition on the properties of Al-doped ZnO thin films prepared by radio frequency magnetron sputtering on polyethylene terephthalate substrate

摘要

The addition of ruthenium in aluminum-doped zinc oxide transparent conducting thin films was deposited on polyethylene terephthalate at 20 deg C by radio frequency magnetron sputtering technique. The structure and electrical properties of the films were investigated with respect to variation of Ru concentration. The XRD and FESEM results show that the film with 0.5 wt percent Ru doping has the best crystallinity and larger pyramid-Uke grains, therefore the resistivity reached to a lowest value of 9.1 x 10~(-4) OMEGA cm. The low carrier mobilities of the films (3-7.2 cm~2 V~(-1) s~(-1)), however, were limited by ionized impurity scattering and grain boundary scattering mechanisms since the carrier concentrations were ranged from 2.2 x 10~(20) to 9.5 x 10~(20) cm~(-3). The transmittance in the visible is greater than 80 percent with the optical band gap in the order of 3.352-3.391 eV.