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首页> 外文期刊>Journal of Applied Polymer Science >Patterned Conductive Polyaniline Films Fabricated Using Lithography and In Situ Polymerization
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Patterned Conductive Polyaniline Films Fabricated Using Lithography and In Situ Polymerization

机译:使用光刻和原位聚合制备图案化的导电聚苯胺薄膜

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摘要

In this article, we describe a novel bottomup technique for the preparation of transparent conductive films of polyaniline (PANI). A UV-curable photoresist was formulated containing an acrylate-endcapped urethane oligomer [UA(PPG400)], acrylic acid, a photoinitiator, and a reactive diluent (tripropylene glycol diacrylate), and the lithography techniques were used to pattern the structure with line widths/spaces of 100 lm/100 lm, 10 lm/10 lm,and 5 lm/5 lm on a polyethylene terephthalate substrate. The carboxylic acid units on the surface of the patterned photoresist interacted with the aniline monomer units to form anilinium complexes; using ammonium persulfate as a chemical oxidant, we then synthesized a layer of conductive PANI on the surface of the patterned resist through in situ polymerization. The optimal conductivity of the PANI conductive film was ca. 10 S/cm. The thin film was characterized, and its physical properties investigated using Fourier transform infrared spectroscopy, UV–Vis spectroscopy, differential scanning calorimetry, optical and atomic force microscopy, and four-point probe conductivity measurements.
机译:在本文中,我们描述了一种新的自下而上的技术,用于制备聚苯胺(PANI)的透明导电膜。配制了可紫外线固化的光致抗蚀剂,其中包含丙烯酸酯封端的氨基甲酸酯低聚物[UA(PPG400)],丙烯酸,光引发剂和反应性稀释剂(三丙二醇二丙烯酸酯),并使用光刻技术对线宽结构进行构图在聚对苯二甲酸乙二醇酯基板上的100 lm / 100 lm,10 lm / 10 lm和5 lm / 5 lm的空间。图案化的光致抗蚀剂表面上的羧酸单元与苯胺单体单元相互作用形成苯胺配合物。使用过硫酸铵作为化学氧化剂,然后我们通过原位聚合在图案化抗蚀剂的表面上合成了一层导电PANI层。 PANI导电膜的最佳导电率约为。 10 S /厘米。对该薄膜进行了表征,并使用傅立叶变换红外光谱,UV-Vis光谱,差示扫描量热法,光学和原子力显微镜以及四点探针电导率测量方法对其物理性质进行了研究。

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