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Modulate the deposition rate through changing the combination of frequency and pulse width at constant duty cycle

机译:通过在恒定占空比下改变频率和脉冲宽度的组合来调节沉积速率

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Due to the large degree of ionization of the sputtered flux and high quality film fabrication, high power pulsed magnetron sputtering (HPPMS) is widely used. However, compared with DC sputtering, low deposition rate is probably the drawback of the HPPMS technique and restricts its application. In order to increase the deposition rate of HPPMS, different combinations of frequency and pulse width at a constant duty cycle were used to modulate the deposition rate of the Ti film. The results showed that wider pulse width would be more effective than increasing frequency on improving titanium deposition rate for a constant duty cycle. The pulse width also would affect the power utilization ratio. Especially for a high duty cycle of 4.8% and 5.6%, a wider pulse was favorable to make full use of power on film deposition, resulting in a higher normalized static deposition rate. Meanwhile, with increase in pulse width for a constant duty cycle, adatom mobility and the deposition rate increased, contributing to growth of crystallite size and higher surface roughness of Ti thin films. (C) 2015 Elsevier B.V. All rights reserved.
机译:由于溅射通量的高度电离和高质量的薄膜制造,高功率脉冲磁控溅射(HPPMS)被广泛使用。但是,与直流溅射相比,低沉积速率可能是HPPMS技术的缺点,并限制了其应用。为了增加HPPMS的沉积速率,在恒定占空比下使用频率和脉冲宽度的不同组合来调制Ti膜的沉积速率。结果表明,在恒定占空比下,较宽的脉冲宽度比增加频率对提高钛沉积速率更有效。脉冲宽度也会影响功率利用率。特别是对于4.8%和5.6%的高占空比,更宽的脉冲有利于充分利用薄膜沉积的功率,从而导致更高的归一化静态沉积速率。同时,随着恒定占空比的脉冲宽度的增加,原子迁移率和沉积速率增加,有助于晶粒尺寸的增加和Ti薄膜的更高的表面粗糙度。 (C)2015 Elsevier B.V.保留所有权利。

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