首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Effects of Sulfur Oxidation on the Electronic and Charge Transport Properties of Fused Oligothiophene Derivatives
【24h】

Effects of Sulfur Oxidation on the Electronic and Charge Transport Properties of Fused Oligothiophene Derivatives

机译:硫氧化对熔融寡聚噻吩衍生物电子和电荷输运性质的影响

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Comparative studies of a series of oligothiophenes and their oxidized compounds are carried out by means of quantum chemical calculations. Taking aim at the effects of chemical oxidation of thienyl sulfur on the modulation of electronic structures and charge transport properties of oligothiophenes, the geometrical structures, molecular reorganization energies upon gaining or losing electrons, molecular ionization potentials (IPs) and electron affinities (EAs), molecular aromaticities, frontier molecular orbitals, and charge mobilities are analyzed in detail to determine the structure property relationships for the investigated oligothiophenes and their corresponding oxidized counterparts. The calculated results show that the oxidation of thienyl sulfur into the corresponding S,S-dioxide could possibly change the charge transport characteristics of fused oligothiophene from hole transporting materials to bipolar or electron transporting materials, shedding light on the exploration of n-type thiophene-based semiconductors.
机译:通过量子化学计算,对一系列低聚噻吩及其氧化的化合物进行了比较研究。着眼于噻吩硫基的化学氧化对低聚噻吩的电子结构和电荷传输性质,几何结构,获得或失去电子时的分子重组能,分子电离势(IP)和电子亲和力(EA)的调节的影响,详细分析了分子的芳香性,前沿的分子轨道和电荷迁移率,以确定了所研究的低聚噻吩及其相应的氧化对应物的结构性质关系。计算结果表明,噻吩硫基氧化为相应的S,S-二氧化物可能会改变稠合低聚噻吩从空穴传输材料到双极或电子传输材料的电荷传输特性,为研究n型噻吩提供了可能。半导体。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号