首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Electronic Structures of Quaterthiophene and Septithiophene on Cu(111): Spatial Distribution of Adsorption-Induced States Studied by STM and DFT Calculation
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Electronic Structures of Quaterthiophene and Septithiophene on Cu(111): Spatial Distribution of Adsorption-Induced States Studied by STM and DFT Calculation

机译:Cu(111)上的四噻吩和七噻吩的电子结构:吸附诱导态的空间分布通过STM和DFT计算研究

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摘要

The oligothiophene molecule family has a tunable energy gap between the highest occupied and lowest unoccupied molecular orbitals (HOMO and LUMO) as the function of the number of thiophene units. This tunability is of great use to controlling carrier injection at the molecule/electrode interface in molecule-based electronic devices. We investigate quaterthiophene (4T) and septithiophene (7T) molecules adsorbed on Cu(111) surfaces by scanning tunneling microscopy and spectroscopy (STM and STS) at room temperature. Both oligothiophene molecules form one-dimensional (1D) chain structures on Cu(111), and each molecule in the 1D structures is observed as a row of bright ovals corresponding to thiophene units. Observed features of 4T and 7T molecules differ from those expected from the HOMO and LUMO of the free-standing molecules, and density-functional calculations of a 4T molecule together with a Cu(111) surface reproduce the experimental STM images as they reflect characteristic spatial distribution of adsorption-induced states. In other words, the adsorption-induced states are spatially protruding out from the molecule and not completely localized in the space between the molecule and the Cu(111) surface.
机译:寡噻吩分子家族具有最高的占据和最低的未占据分子轨道(HOMO和LUMO)之间可调节的能隙,这是噻吩单元数的函数。这种可调性对于控制基于分子的电子设备中的分子/电极界面处的载流子注入非常有用。我们通过在室温下扫描隧道显微镜和光谱法(STM和STS)研究吸附在Cu(111)表面上的四噻吩(4T)和七噻吩(7T)分子。两个低聚噻吩分子在Cu(111)上形成一维(1D)链结构,并且在1D结构中的每个分子都被观察为一行对应于噻吩单元的明亮椭圆形。观察到的4T和7T分子的特征与独立分子的HOMO和LUMO所预期的特征不同,并且4T分子与Cu(111)表面的密度泛函计算重现了实验STM图像,因为它们反映了特征空间吸附诱导态的分布。换句话说,吸附诱导态在空间上从分子向外突出,而不完全位于分子与Cu(111)表面之间的空间中。

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