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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Experimental Evidence of Localized Shallow States in Orthorhombic Phase of CH3NH3PbI3 Perovskite Thin Films Revealed by Photocurrent Beat Spectroscopy
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Experimental Evidence of Localized Shallow States in Orthorhombic Phase of CH3NH3PbI3 Perovskite Thin Films Revealed by Photocurrent Beat Spectroscopy

机译:CH3NH3PbI3钙钛矿薄膜斜方晶相中的浅层局部光态的实验证据

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摘要

We demonstrate evidence of localized states near the band edge of lead halide perovskite semiconductor CH3NH3PbI3 thin films. In these films, the high-temperature tetragonal and the low-temperature orthorhombic phases coexist at low temperatures. We determine the exact energy level of the localized states in the orthorhombic phase via photocurrent (PC) beat spectroscopy. The lack of observation of localized states in photoluminescence and absorption measurements indicates that the density of the localized states is fairly low even in solution-processed polycrystalline films. Ultrafast PC spectroscopy enables us to monitor low-density localized states in inhomogeneous polycrystalline films.
机译:我们展示了卤化钙钛矿半导体CH3NH3PbI3薄膜的带边缘附近的局部状态的证据。在这些膜中,高温四方相和低温正交相在低温下共存。我们通过光电流(PC)拍谱确定正交相中的局部状态的准确能级。在光致发光和吸收测量中缺乏对局域态的观察表明,即使在溶液处理的多晶膜中,局域态的密度也相当低。超快PC光谱使我们能够监视非均质多晶膜中的低密度局部状态。

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