Nanocrystal Formation in Silicon Oxy-Nitride Films for Photovoltaic Applications: Optical and Electrical Properties

摘要

Thin films of nanocrystalline SiOxNy are studied in view of their application in silicon heterojunction (SHJ) solar cells. In particular, the formation of the nanocrystals and their effects on the electrical and optical properties of the films are investigated. The role of the oxygen content on the properties of the layers is clarified as well. The obtained layers show very high conductivity (44 S/cm), low activation energy (1.85 meV) and high Tauc gap (2.5 eV), promising features for their application in photovoltaics.