首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Emergence of Oxygen Reduction Activity in Partially Oxidized Tantalum Carbonitrides: Roles of Deposited Carbon for Oxygen-Reduction-Reaction-Site Creation and Surface Electron Conduction
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Emergence of Oxygen Reduction Activity in Partially Oxidized Tantalum Carbonitrides: Roles of Deposited Carbon for Oxygen-Reduction-Reaction-Site Creation and Surface Electron Conduction

机译:部分氧化的碳氮化钽中氧还原活性的出现:沉积碳在氧还原反应位点生成和表面电子传导中的作用

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摘要

Tantalum-oxide-based oxygen-reduction-reaction (ORR) catalysts have the ORR activity only when they are synthesized from tantalum carbonitrides. Namely pure Ta2O5 does not show ORR activity, and carbon or nitrogen in precursors is inevitable to form ORR active sites and to promote ORR. To clarify this reason, we investigated structural and surface electronic properties of tantalum-oxide-based catalysts, which were synthesized by gradually oxidizing tantalum carbonitride under low partial pressure of oxygen at 1000 °C, by using X-ray absorption spectroscopy, transmission electron microscopy, and Raman spectroscopy. The results indicate that oxidized tantalum carbonitrides with high ORR activity had oxygen vacancies near the surface, indicating that the vacancies could work as an active site for ORR. We also found that carbon was deposited on the oxide's surface, during oxidation of tantalum carbonitrides. The deposited carbon seems to play two important roles in formation of oxygen vacancies (ORR active sites) providing reductive atmosphere, and in producing electron conduction paths on rather insulating oxides' surface.
机译:基于氧化钽的氧还原反应(ORR)催化剂仅在由碳氮化钽合成时才具有ORR活性。即,纯的Ta 2 O 5不显示ORR活性,并且前体中的碳或氮不可避免地形成ORR活性位点并促进ORR。为了阐明这一原因,我们研究了氧化钽基催化剂的结构和表面电子性能,该催化剂是通过在1000℃的氧气低分压下逐步氧化碳氮化钽而制成的,采用X射线吸收光谱法,透射电子显微镜法和拉曼光谱。结果表明,具有高ORR活性的氧化碳氮化钽在表面附近具有氧空位,表明该空位可以用作ORR的活性位点。我们还发现,在碳氮化钽氧化过程中,碳沉积在氧化物的表面上。沉积的碳似乎在提供还原性气氛的氧空位(ORR活性位)和在相当绝缘的氧化物表面产生电子传导路径方面起着两个重要作用。

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