All-Metallic High-Performance Field Effect Transistor Based on Telescoping Carbon Nanotubes: An ab Initio Study

摘要

It has been well established that the electrical resistance of metal is insensitive to gate voltage and unsuitable for making field effect transistors. However, we find that telescoping pristine double-walled metallic carbon nanotubes are extremely sensitive to gate voltage with an on/off ratio up to 10 based on the first principles quantum transport calculations. This remarkable feature is closely related to the antiresonances in the transmission spectra. Besides, robust negative differential resistance effects are also found in the same device.