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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Indium Tin Oxide Micro- and Nanostructures Grown by Thermal Treatment of InN/SnO2
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Indium Tin Oxide Micro- and Nanostructures Grown by Thermal Treatment of InN/SnO2

机译:InN / SnO2热处理生长的铟锡氧化物微结构和纳米结构

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Mixtures of InN and SnO2 powders, with a weight ratio of 10:1, have been used as precursors for the thermal growth of arrow-shaped and other elongated micro- and nanostructures of indium-tin oxide (ITO) containing about 2.6 atom % of Sn. The temperatures used in the process, in the range 650-750 °C, favor the decomposition of InN and oxidation of In, with a limited incorporation of Sn in the resulting compound. Arrow-shaped indium-tin oxide structures are obtained and formation of stannates during the process is avoided. X-ray photoelectron spectroscopy indicates that tin incorporates into the In2O3 lattice mainly as Sn~(4+). Luminescence of the ITO microstructures has been studied by cathodoluminescence in the scanning electron microscope.
机译:重量比为10:1的InN和SnO2粉末混合物已被用作包含2.6%(原子)的铟锡氧化物(ITO)的箭头形及其他细长的微结构和纳米结构的热生长的前体。锡在该方法中使用的温度在650-750℃的范围内,有利于InN的分解和In的氧化,并且在所得化合物中有限地掺入了Sn。获得了箭头形的铟锡氧化物结构,避免了在该过程中锡酸盐的形成。 X射线光电子能谱表明,锡主要以Sn〜(4+)的形式掺入In2O3晶格中。 ITO微结构的发光已经通过在扫描电子显微镜中的阴极发光研究。

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