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首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >Thiophene adsorption and activation on MoP(001), gamma Mo2N(100), and Ni2P(001): Density functional theory studies
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Thiophene adsorption and activation on MoP(001), gamma Mo2N(100), and Ni2P(001): Density functional theory studies

机译:噻吩在MoP(001),γMo2N(100)和Ni2P(001)上的吸附和活化:密度泛函理论研究

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摘要

The adsorption and dissociation of thiophene on the MoP(001), gamma-Mo2N(100), and Ni2P(001) surfaces have been computed by using the density functional theory method. It is found that thiophene adsorbs dissociatively on MoP(001), while nondissociatively on gamma-Mo2N(100) and Ni2P(001). On MoP(001), the dissociation of the C-S bonds is favored both thermodynamically and kinetically, while the break of the first C-S bond on gamma-Mo2N(100) has an energy barrier of 1.58 eV and is endothermic by 0.73 eV. On Ni2P(001) there are Ni3P2-and Ni3P-terminated surfaces. On the Ni3P2-terminated surface, the dissociation of the C-S bonds of adsorbed thiophene is endothermic, while it is exothermic on the Ni3P-terminated surface.
机译:使用密度泛函理论方法计算了噻吩在MoP(001),γ-Mo2N(100)和Ni2P(001)表面的吸附和解离。发现噻吩在MoP(001)上解离吸附,而在γ-Mo2N(100)和Ni2P(001)上非解离吸附。在MoP(001)上,热力学和动力学都有利于C-S键的解离,而γ-Mo2N(100)上第一个C-S键的断裂具有1.58 eV的能垒,并且吸热为0.73 eV。在Ni2P(001)上有Ni3P2和Ni3P端接的表面。在Ni3P2终止的表面上,吸附的噻吩的C-S键解离是吸热的,而在Ni3P终止的表面上是放热的。

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