首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >Structure,Bonding Nature,and Binding Energy of Alkanethiolate on As-Rich GaAs (001) Surface:A Density Functional Theory Study
【24h】

Structure,Bonding Nature,and Binding Energy of Alkanethiolate on As-Rich GaAs (001) Surface:A Density Functional Theory Study

机译:富砷GaAs(001)表面上硫代烷烃的结构,键合性质和结合能:密度泛函理论研究

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Chemisorption of alkanethiols on As-rich GaAs (001) surface under a low coverage condition was studied using first principles density functional calculations in a periodic supercell approach.The thiolate adsorption site,tilt angle and its direction are dictated by the high directionality of As dangling bond and sulfur 3p orbital participating in bonding and steric repulsion of the first three CH_2 units from the surface.Small charge transfer between thiolate and surface,strong dependence of total energy on tilt angle,and a relatively short length of 2.28 A of the S-As bond indicate the highly covalent nature of the bonding.Calculated binding energy of 2.1 eV is consistent with the available experimental data.
机译:在周期性超电池方法中,采用第一原理密度函数计算,研究了低硫条件下低硫条件下链烷硫醇在富砷GaAs(001)表面上的化学吸附。硫醇盐的吸附位,倾角及其方向是由砷的高方向性决定的。键和硫3p轨道参与从表面开始的前三个CH_2单元的键合和空间排斥。硫醇盐和表面之间的电荷转移很小,总能量对倾斜角的依赖性很强,并且S-的长度仅为2.28 A作为键表示键的高度共价性质。计算的2.1 eV的结合能与可用的实验数据一致。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号