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Half-metallicity in graphene nanoribbons with topological defects at edge

机译:边缘具有拓扑缺陷的石墨烯纳米带的半金属性

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摘要

We report first principles studies of zigzag edged graphene nanoribbons (ZGNR) with one edge partially covered by topological defects. With increasing coverage of an edge by pentagons and heptagons, which are two of the simplest topological defects possible in a graphenic lattice, ZGNRs evolve from a magnetic semiconductor to a ferromagnetic metal. This evolution can be intermediated by a narrow bandgap half-metallic phase, upon suitable concentration and conformation of defects at the edge. Spin-frustration induced by topological defects lead to substantial lowering of magnetic ordering and localization of defect-states in the vicinity of the defects. Dispersion of bands constituted by the defect-states within the bandgap of the corresponding unmodified ZGNR, leads to availability of energy windows for spin-polarized electron transport. Driven primarily by exchange interactions, the energy window for transport of electrons near Fermi energy, is consistently wider and more prevalent for the minority spin, in the entire class of ZGNRs with discontinuous patches of topological defects at an edge. Such defects have been widely predicted and observed to be naturally present at the interfaces in polycrystalline graphene, and can even be formed through chemical and physical processes. Our approach thus may lead to a feasible strategy to manifest workable half-metallicity in ZGNRs without involving non-carbon dopants or functional groups.
机译:我们报告锯齿形边缘石墨烯纳米带(ZGNR)的一个边缘被拓扑缺陷部分覆盖的第一原理研究。随着五边形和七边形(这是石墨烯晶格中最简单的两种拓扑缺陷)对边缘的覆盖率不断提高,ZGNR从磁性半导体演变为铁磁性金属。在边缘处缺陷的适当浓度和构象下,这种演化可以通过窄带隙半金属相进行调节。拓扑缺陷引起的自旋挫败会导致磁序显着降低,并导致缺陷附近缺陷状态的定位。由缺陷状态构成的能带在相应的未修饰ZGNR的带隙内的分散导致了自旋极化电子传输的能量窗口的可用性。在整个ZGNR中,在边缘存在不连续的拓扑缺陷斑块的ZGNR中,主要由交换相互作用驱动的电子在费米能量附近的传输能量窗口始终较宽,在少数自旋中更为普遍。已经广泛预测并观察到这种缺陷自然存在于多晶石墨烯的界面上,甚至可以通过化学和物理过程形成。因此,我们的方法可能导致一种可行的策略,以在不涉及非碳掺杂剂或官能团的情况下在ZGNR中表现出可行的半金属性。

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