...
首页> 外文期刊>The Journal of Chemical Physics >Experimental and theoretical study on generalized oscillator strengths of the valence-shell electronic excitations in CF4
【24h】

Experimental and theoretical study on generalized oscillator strengths of the valence-shell electronic excitations in CF4

机译:CF4中价壳电子激发的广义振子强度的实验和理论研究

获取原文
获取原文并翻译 | 示例
           

摘要

We report an angle-resolved electron energy loss spectroscopy (EELS) study on the valence-shell electronic excitations in CF_4. Experimentally momentum-transfer-dependent generalized oscillator strengths (GOSs) or GOS profiles for low-lying electronic excitations at 12.6, 13.8, and 14.8 eV are derived from EELS spectra measured at an incident electron energy of 3 keV. We also calculate GOS profiles using theoretical wave functions at the equation-of-motion coupled cluster singles and doubles level. There are good agreements between experiment and theory except for a significant discrepancy at small momentum transfer for the 1t_l → 3s Rydberg excitation at 12.6 eV. The experimental GOS profile for 1t_l → 3s exhibits a shape that is typical of a dipole allowed transition, while the excitation is formally dipole forbidden. This symmetry breaking behavior is rationally accounted for by qualitatively analyzing the nature of vibronic coupling effects. For the excitation band at 13.8 eV, a shoulder and extrema are observed in the GOS profile and are then found to be mainly due to the 2 ~1T_2 transition. Furthermore, the theoretical GOS profile for the 2~1T_2 transition exhibits a remarkable oscillatory pattern; its origin is discussed by considering multicenter interference effects. For the 14.8 eV excitation band, the predominant nondipole nature of the underlying transitions are revealed and comparisons with the theoretical calculations show that major contributions to this band come from the 4t _2 → 3p excitation.
机译:我们报告了CF_4中价壳电子激发的角度分辨电子能量损失谱(EELS)研究。根据在3 keV入射电子能量下测得的EELS光谱,得出了在12.6、13.8和14.8 eV处低电子激发的实验性动量传递相关广义振动强度(GOS)或GOS分布。我们还使用运动方程耦合簇单打和双打级别的理论波函数来计算GOS轮廓。实验和理论之间有很好的一致性,除了在12.6eV处1t_1→3s里德堡激发的小动量传递存在显着差异外。 1t_1→3s的实验GOS轮廓显示出典型的偶极允许跃迁形状,而激发被正式禁止偶极。通过定性分析振动耦合效应的性质,可以合理地解释这种对称破坏行为。对于13.8 eV处的激发带,在GOS曲线中观察到了肩部和极值,然后发现它们主要是由于2〜1T_2跃迁。此外,理论上的2〜1T_2跃迁的GOS曲线表现出明显的振荡模式。通过考虑多中心干扰效应来讨论其起源。对于14.8 eV激发带,揭示了下面跃迁的主要非偶极性质,并且与理论计算的比较表明,对该带的主要贡献来自4t _2→3p激发。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号