Indium induced band gap tailoring in AgGa1-xInxS2 chalcopyrite structure for visible light photocatalysis

摘要

Indium was substituted at gallium site in chalcopyrite AgGaS2 structure by using a simple solid solution method. The spectroscopic analysis using extended x-ray absorption fine structure and x-ray photoelectron spectroscopy confirmed the indium substitution in AgGaS2 lattice. The band gap energy of AgGa1-xInxS2 (x=0 - 1) estimated from the onset of absorption edge was found to be reduced from 2.67 eV (x=0 ) to 1.9 eV (x=1 ) by indium substitution. The theoretical and experimental studies showed that the indium s orbitals in AgGa1-xInxS2 tailored the band gap energy, thereby modified the photocatalytic activity of the AgGa1-xInxS2. (c) 2008 American Institute of Physics.