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An interfacial energy mechanism for the complete inhibition of crystal growth by inhibitor adsorption

机译:通过抑制剂吸附完全抑制晶体生长的界面能机制

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We present a unified model for complete crystal-growth inhibition based on the thermodynamics of interfaces.The premise for our model is that the adsorption of inhibitor leads to a reduction in interfacial tension or edge energy for the crystal surface or step,respectively.In our formulation,the work to add a layer or grow a step increases due to the difference in interfacial tensions or edge energies for surfaces with and without an adsorbed inhibitor.For a large enough difference in interfacial tensions or edge energies,complete inhibition of growth is realized when the total work does not decrease as more crystals are formed.We demonstrate that our model can provide a theoretical description of critical subcooling data for ice with antifreeze proteins and glycoproteins,critical subcooling data for hydrates and ionic crystals,and critical supersaturation data for various crystal systems.
机译:我们基于界面的热力学提供了一个用于完全抑制晶体生长的统一模型。我们模型的前提是抑制剂的吸附分别导致晶体表面或台阶的界面张力或边缘能的降低。配方中,由于有和没有吸附抑制剂的表面的界面张力或边缘能量的差异,增加层或增加台阶的工作增加了。对于界面张力或边缘能量的足够大的差异,可以实现对生长的完全抑制我们证明了该模型可以为含抗冻蛋白和糖蛋白的冰的临界过冷数据,水合物和离子晶体的临界过冷数据以及各种不同的临界过饱和数据提供理论上的描述。晶体系统。

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