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首页> 外文期刊>The Journal of Chemical Physics >Spectral features of LO phonon sidebands in luminescence of free excitons in GaN
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Spectral features of LO phonon sidebands in luminescence of free excitons in GaN

机译:GaN中自由激子的发光中本振声子边带的光谱特征

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In the paper a combined experimental and theoretical investigation of the longitudinal optical phonon sidebands (PSBs) in the luminescence of free excitons in GaN at moderately high temperatures was reported.The spectral features,including line broadening,shift,and asymmetry of the one- and two-phonon PSBs,were revealed both experimentally and theoretically.It is found that the linewidth of the one-phonon PSB is surprisingly always larger than that of the two-phonon PSB in the interested temperature range.Moreover,the thermal broadening rates of the one- and two-phonon PSBs are considerably different.We adopted the Segall-Mahan theory [B.Segall and G.D.Mahan,Phys.Rev.171,935 (1968)] to compute the PSB spectra of the free excitons in GaN.Only one adjustable parameter,the effective mass of the holes,was used in the calculations.For the one-phonon PSB,an excellent agreement between theory and experiment is achieved when an adequate effective mass of the holes was used.
机译:本文报道了在中等高温下GaN中的自由激子发光中的纵向光学声子边带(PSBs)的组合实验和理论研究。光谱特征包括单峰和单峰的谱线展宽,位移和不对称性在实验和理论上都揭示了两声子PSB。发现,在感兴趣的温度范围内,一声子PSB的线宽总是比二声子PSB的线宽大。一声子和二声子PSB的差别很大。我们采用Segall-Mahan理论[B.Segall和GDMahan,Phys.Rev.171,935(1968)]计算GaN中自由激子的PSB谱。对于单声子PSB,当使用足够的有效孔质量时,理论和实验之间取得了很好的一致性。

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