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Adsorption structure of acetylene on Ge(001): A first-principles study

机译:乙炔在Ge(001)上的吸附结构:第一性原理研究

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The adsorption of acetylene on the Ge(001) surface is investigated by first-principles density-functional calculations within the generalized gradient approximationa. We find that the di-sigma structure is energetically favored over the end-bridtge, r-bridge, and p-bridge structures, while the paired end-bridge structure is the most stable. Especially, our calculated adsorption energy for the p-bridge structure is - 0.03 eV, indicating that this structure is not stable on Ge(001). This result does not support the conclusion drawn from a recent scanning tunneling spectroscopy (STM) and temperature programmed desorption experiment where the most populated adsorption configuration was assigned to the p-bridge structure. Our calculated energetics and STM simulation of various adsorption configurations are consistent with the two observed configurations being the di-sigma and paired end-bridge structures.
机译:乙炔在Ge(001)表面上的吸附是通过第一原理密度泛函计算在广义梯度近似a中研究的。我们发现di-sigma结构在能量上比末端桥,r桥和p桥结构更受青睐,而配对的末端桥结构则最稳定。特别是,我们计算出的p桥结构的吸附能为-0.03 eV,表明该结构在Ge(001)上不稳定。该结果不支持根据最近的扫描隧道光谱(STM)和程序升温脱附实验得出的结论,在该实验中,将人口最多的吸附构型分配给了p桥结构。我们计算得出的各种吸附构型的能量学和STM模拟与观察到的两个构型一致,即双西格玛和成对的端桥结构。

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