首页> 外文期刊>The Journal of Chemical Physics >The lowest doublet and quartet potential energy surfaces involved in the N(S-4)+O-2 reaction. II. Ab initio study of the C-2v-symmetry insertion mechanism
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The lowest doublet and quartet potential energy surfaces involved in the N(S-4)+O-2 reaction. II. Ab initio study of the C-2v-symmetry insertion mechanism

机译:N(S-4)+ O-2反应涉及的最低的二重态和四重态势能面。二。 C-2v对称插入机制的从头算研究

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In the present work we have carried out ab initio complete active space self-consistent field (CASSCF) and second-order perturbation theory on CASSCF wave function (CASPT2) calculations and also some density functional theory calculations with the aug-cc-pVTZ Dunning's basis set on the lowest A(1), B-1, A(2), and B-2 doublet and quartet potential energy surfaces (PES) that could be involved in the title reaction. Thus, several minima, transition states, and surface crossings have been found for the C-2v-insertion reaction mechanism. The results agree very well with available experimental data [i.e., for NO2 ((2)A(1)), MIN2 (B-2(2)), NO2 ((2)Pi(u))] and with other previous ab initio calculations. Six A'/A'- and four A'/A'-type surface crossings were located and classified for these PES', whose only one (i.e., B-2(2)/(2)A(1)) has been previously reported in theoretical and experimental studies. High-energy barriers were found for the direct C-2v-insertion mechanism (3.11 and 2.54 eV for the lowest doublet and quartet PES' at the CASPT2/aug-cc-pVTZ level, respectively), clearly showing that this competitive mechanism is much less favorable than the direct C-s-abstraction or the indirect C-s-insertion reaction mechanisms reported in Paper I. (C) 2002 American Institute of Physics. [References: 49]
机译:在目前的工作中,我们对CASSCF波函数(CASPT2)计算进行了从头算起的完整活动空间自洽场(CASSCF)和二阶摄动理论,并在aug-cc-pVTZ Dunning的基础上进行了一些密度泛函理论计算设置在可能涉及标题反应的最低A(1),B-1,A(2)和B-2双重和四重态势能面(PES)上。因此,已经发现对于C-2v插入反应机理的几个极小值,过渡态和表面交叉。结果与可用的实验数据[即,对于NO2((2)A(1)),MIN2(B-2(2)),NO2((2)Pi(u)))非常吻合,并且与其他先前的ab非常吻合从头算。为这些PES'定位并分类了六个A'/ A'-型和四个A'/ A'型表面交叉,并对其进行了分类(只有B-2(2)/(2)A(1))。先前在理论和实验研究中报道过。在直接C-2v插入机制中发现了高能壁垒(在CASPT2 / aug-cc-pVTZ水平上,最低的双峰和四重峰PES'分别为3.11和2.54 eV),清楚地表明了这种竞争机制非常有效不如论文I.(C)2002 American Physics中报道的直接Cs吸收或间接Cs插入反应机制有利。 [参考:49]

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