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Relationship between electronic and geometric structures of the O/Cu(001) system

机译:O / Cu(001)系统的电子结构与几何结构之间的关系

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The electronic structure of the (2root2xroot2)R45degrees O/Cu(001) system has been calculated using locally self-consistent, real space multiple scattering technique based on first principles. Oxygen atoms are found to perturb differentially the long-range Madelung potentials, and hence the local electronic subbands at neighboring Cu sites. As a result the hybridization of the oxygen electronic states with those of its neighbors leads to bonding of varying ionic and covalent mix. Comparison of results with those for the c(2x2) overlayer shows that the perturbation is much stronger and the Coulomb lattice energy much higher for it than for the (2root2xroot2)R45degrees phase. The main driving force for the 0.5 ML oxygen surface structure formation on Cu(001) is thus the long-range Coulomb interaction which also controls the charge transfer and chemical binding in the system. (C) 2002 American Institute of Physics. [References: 27]
机译:(2root2xroot2)R45degrees O / Cu(001)系统的电子结构已使用基于第一原理的局部自洽实空间多重散射技术进行了计算。氧原子被不同程度地扰动了远距离的马德隆电势,因此扰动了邻近铜位点的局部电子子带。结果,氧电子态与其相邻电子态的杂化导致键合变化的离子和共价混合物。结果与c(2x2)覆盖层的结果比较表明,与(2root2xroot2)R45度相相比,其摄动要强得多,库仑晶格能量要高得多。因此,在Cu(001)上形成0.5 ML氧气表面结构的主要驱动力是远程库仑相互作用,该相互作用还控制了系统中的电荷转移和化学键合。 (C)2002美国物理研究所。 [参考:27]

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