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Calculation of the cadmium-water interface

机译:镉-水界面的计算

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This paper presents the results of a very nearly ab initio calculation of the molecular and electronic distributions at the interface of hcp cadmium and liquid water. The calculated results were obtained by combining a molecular dynamics simulation for the H2O molecular distributions with a self-consistent density functional calculation for the valence electron density of the cadmium surface. The method employs a three-dimensionally periodic unit cell, uses standard molecular dynamics potentials for H2O-H2O interactions, and calculates a self-consistent electronic structure for the metal at each time step of the molecular dynamics simulation, with the electron-H2O and electron-Cd interactions represented by pseudopotentials. The electronic and H2O distributions of the Cd-water interface are obtained both for zero applied potential, and for a range of electric potentials applied across the interface. Results are given for the equilibrium structure of interface, and its response to applied potentials. An analysis of the electrostatics of the interface yields a prediction for the compact capacitance of the cadmium-electrolyte interface, which is compared to experiment. (C) 2000 American Institute of Physics. [S0021-9606(00)70806-3]. [References: 38]
机译:本文介绍了从头算计算hcp镉和液态水界面处的分子和电子分布的结果。通过将H2O分子分布的分子动力学模拟与镉表面的价电子密度的自洽密度泛函计算相结合,获得了计算结果。该方法采用三维周期性晶胞,使用标准的分子动力学势能进行H2O-H2O相互作用,并在分子动力学模拟的每个时间计算电子与H2O和电子的自洽电子结构-Cd相互作用由假电位表示。 Cd-水界面的电子分布和H2O分布是针对零施加电势以及跨界面施加的一定范围的电势获得的。给出了界面平衡结构及其对施加电势的响应的结果。通过对界面静电的分析,可以得出镉-电解质界面紧密电容的预测结果,并将其与实验进行比较。 (C)2000美国物理研究所。 [S0021-9606(00)70806-3]。 [参考:38]

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