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首页> 外文期刊>Tetrahedron >Stereoelectronic factors in bridgehead C-H bond insertion: studies toward the total synthesis of maoecrystal V
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Stereoelectronic factors in bridgehead C-H bond insertion: studies toward the total synthesis of maoecrystal V

机译:桥头C-H键插入中的立体电子因素:茂铁晶体V的全合成研究

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摘要

A strategy for the total synthesis of maoecrystal V is presented. The key interior vicinal quaternary carbon centers will be formed via sequential bridgehead C-H bond insertion and enolate functionalization. Studies herein validate the C-H bond insertion as feasible in model studies, though there are significant effects on the selectivity for the bridgehead position from neighboring groups. Both inductive electron withdrawing elements and sterics play a role in deactivating that position, with the former having a greater effect. Forming the second quaternary carbon is possible via enolate acylation and alkylation. Lastly, an approach to synthesize the cyclohexenone ring of maoecrystal V is described. (C) 2016 Elsevier Ltd. All rights reserved.
机译:提出了一种全合成毛晶V的策略。关键的内部邻近四元碳中心将通过顺序桥头C-H键插入和烯醇化官能化而形成。尽管对邻组桥头位置的选择性有重大影响,但本文的研究证实了C-H键的插入在模型研究中是可行的。感应吸电子元素和空间都在使该位置失活中起作用,前者的作用更大。可以通过烯酸酯化和烷基化形成第二季碳。最后,描述了合成毛晶V的环己烯酮环的方法。 (C)2016 Elsevier Ltd.保留所有权利。

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