Field-effect magnetization reversal in ferromagnetic semiconductor quantum wells - art. no. 193311

摘要

We predict that a bias-voltage-assisted magnetization reversal process will occur in Mn-doped II-VI semiconductor quantum wells or heterojunctions with carrier-induced ferromagnetism. The effect is due to strong exchange-coupling-induced subband mixing that leads to electrically tunable hysteresis loops. Our model calculations are based on the mean-field theory of carrier-induced ferromagnetism in Mn-doped quantum wells and on a semiphenomenological description of the host II-VI semiconductor valence bands. [References: 23]